Carnegie Mellon University
June 01, 2016

Nanofab to install Elionix electron beam lithography system

Carnegie Mellon’s Nanofabrication Facility will soon be installing a state-of-the-art Elionix 100 kV electron beam lithography system. The Elionix ELS-G100 EBL system will be used to directly write patterns as small as six nanometers. Areas of research of the Nanofab include magnetic/ spintronic memory and logic devices, NEMS and MEMS, functional oxides and resistive RAM, photonics, bio-electronics and bio-interfaces, 2D materials, and organic/inorganic interfaces.

“We are excited to be receiving the Elionix e-beam system,” said Matthew Moneck, Executive Manager for the Nanofabrication Facility. “This system will help us to achieve leading edge research into the next generation of devices and structures.”

The Carnegie Mellon Nanofabrication Facility is one of the most well equipped university based facilities for thin film and nano/micro device development in the United States. The Nanofab currently includes a cleanroom with 2,600 square feet of class 100 space, and 1,200 square feet of class 10 space, as well as three thin film labs. During the summer of 2016, the Nanofab will move to a state-of-the art 11,000 square foot facility in the Sherman and Joyce Bowie Scott Hall, Carnegie Mellon’s newest building. The facility will be housed in the John and Claire Bertucci Nanotechnology Laboratory and will include the 8,500 square foot class 10/100 Eden Hall Foundation cleanroom, as well as Post Processing and Tool Prototype Development areas. Carnegie Mellon faculty, staff, and students, as well as external academic and non-academic users, can access the labs and collaborate on projects originating from various departments in the College of Engineering, the Mellon College of Science, and industry.

Elionix electron beam lithography systems are suited for the multi-user environment:

The Elionix ELS-G100 is the leading system sold into a majority of universities worldwide due to its high reliability, ease of use, and its capability to write extremely small Nano patterns. Building on over 40 years of electron beam lithography manufacturing, the Elionix ELS-G100 combines high speed writing using a 100 MHz deflection system, an expanded beam current dynamic range from 20 pA to 100 nA, and minimal distortion over a 1mm write field. In addition, the ultra-high precision laser interferometer stage offers outstanding overlay and stitching accuracy, allowing patterns to be written over an extended area.

About Elionix:

Established 40 years ago, Elionix manufactures systems that utilize particle beams; electron, ion and electromagnetic waves that include light and x-ray. Over the years, Elionix has manufactured 400 dedicated electron beam lithography systems and maintains the largest market share in Japan, which is widely known for world-class electron beam design and development.

See the full press release here.