CMU MEMS Laboratory Publication Abstract


in IEEE/ASME Journal of Microelectromechanical Systems, pp. 188-195, June 2002.
A Post-CMOS Micromachined Lateral Accelerometer
H. Luo, G. Zhang, R. Carley and G. Fedder
In a post-complementary metal–oxide–semiconductor (CMOS) micromachining technology, the process flow enables the integration of micromechanical structures with conventional CMOS circuits which are low-cost and readily available. This paper presents a lateral capacitive sensing accelerometer fabricated in the post-CMOS process. Design advantages include electrically isolated multimetal routing on microstrctures to create full-bridge capacitive sensors, and integration to increase transducer sensitivity by minimizing parasitic capacitance. In a size of 350 µm by 500 µm, this accelerometer has a 1 mG/ Hz½ resolution and a linear range of at least ±13 G. The fundamental limitations of mechanical and electronic noise for acceleration sensing are addressed.
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Full paper (PDF) (opens in new window).

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