CMU MEMS Laboratory Publication Abstract


in Proceedings of the 2003 SEM Annual Conference on Experimental and Applied Mechanics (SEM Annual), June 2-4, 2003, Charlotte, North Carolina.
CMOS Electrothermal Lateral Micromovers for Actuation and Self-Assembly
A. Oz and G. Fedder
A new CMOS electro-thermal actuator has been designed and fabricated. This design is capable of up to 6.8 µm lateral displacement with a length of 220 µm and a width of 22 µm. The structures were made from the CMOS interconnect stack using a maskless CMOS micromachining process. These 1st generation actuators were fabricated using Austria Microsystems (AMS) 0.6 µm CMOS process and Agilent 0.5 µm CMOS process. 2nd generation electro-thermal actuator designs in TSMC 0.35 µm CMOS Process have more area efficiency than the 1st generation designs. For 3.5 µm actuation, the 2nd generation actuators with a length of 224 µm and a width of 22 µm consume 18mW of power. The essential differences between this work and prior work are the high displacement magnitude with small geometry, pure lateral movement and the CMOS compatibility. The implementation in CMOS processes is particularly attractive for making tuning passives for RF applications. Several RF-MEMS tunable capacitor designs with these CMOS electro-thermal actuators have been fabricated and tested.
© 2003 Society for Experimental Mechanics, Inc. All rights reserved.
Full paper not available from outside CMU

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