CMU MEMS Laboratory Publication Abstract

 

in Technical Proceedings of the Sixth International Conference on Modeling and Simulation of Microsystems Semiconductors, Sensors and Actuators (MSM), pp. 214-217, February 24-26, 2003, San Francisco, California.
A Simple Description of Turn-Induced Transverse Field Dispersion in Microfluidic Channels for System-Level Design
R. Magargle, J. Hoburg and T. Mukherjee
ABSTRACT:
This paper shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions [1,2,3,4]. The model applies directly to the high Peclet number regime, which is relevant to DNA separations [5], but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models [2,3,4] show significant differences, about a factor of 4, in the expected variance for high Peclet complementary turns.
© 2003 Computational Publications. Abstracting is permitted with credit to the source. Other copying, reprint or repoduction requests should be addressed to: Copyrights Manager, Computational Publications, Copyright Office, 899 Rue Jean de Gingins, 01220 Divonne les Bains, France. Computational Publications is a subsuduary of the Applied Computational Researh Society, a non-profit organization
Full paper not available from outside CMU


This page was generated in 0.00555 seconds at 10:37:03 pm EST on 21 Nov 2017.

overview | projects | people | publications | intranet | resources         © 1998-2009  Carnegie Mellon