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in Technical Proceedings of the Sixth International Conference on Modeling and Simulation of Microsystems Semiconductors, Sensors and Actuators (MSM), pp. 214-217, February 24-26, 2003, San Francisco, California. |
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This paper shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions [1,2,3,4]. The model applies directly to the high Peclet number regime, which is relevant to DNA separations [5], but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models [2,3,4] show significant differences, about a factor of 4, in the expected variance for high Peclet complementary turns.
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Full paper not available from outside CMU
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