CMU MEMS Laboratory Publication Abstract


in Proceedings of 2002 ASME International Mechanical Engineering Congress & Expositon (IMECE), pp. 39240, November 17-22, 2002, New Orleans, LA, USA.
A Versatile, Fast and Inexpensive Microfabrication Technique Using a One Metal And One Silicon Dioxide Film
G. C. Lopez and K. Gabriel
A versatile fabrication process that allows users to quickly construct micromachined structures using a one metal, one silicon dioxide film stack on a silicon wafer is presented. This simplified process, which we have labeled Mock CMOS or M-CMOS, (a) starts from pre-processed wafers and requires only one photolithography step, (b) provides a conductor material for actuating electrostatic and thermal devices, (c) avoids electrical shorting between metal microstructures or to the silicon substrate by using silicon dioxide as an insulator, and (d) allows quick prototyping of true CMOS-MEMS structures similar to those designed at Carnegie Mellon University (CMU). Devices successfully microfabricated with M-CMOS include surface-normal and lateral electrostatic and thermal actuators, the majority of which were designed by forty students in an Introduction to MEMS course in Fall 2001 at Carnegie Mellon University.
© 2002 ASME International. Photocopies of articles may be obtained from Linda Hall Library of Science, Engineering, and Technology in Kansas City, Missouri, US. They can be contacted by: Interlibrary Loan and Document Delivery, 5109 Cherry Street, Kansas City, MO 64110-2498. Telephone: 1-800-662-1545. Fax: 1-816-926-8785. Email: REQUESTS@LHL.LIB.MO.US
Full paper not available from outside CMU

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