CMU MEMS Laboratory Publication Abstract


in Technical Digest of the 15th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 324-327, January 20-24, 2002, Las Vegas, NV, USA.
Temperature control of CMOS micromachined sensors
H. Lakdawala and G. Fedder
In this paper, we describe a methodology for temperature stabilization of CMOS micromachined sensors. Temperature stabilization of a z-axis accelerometer, fabricated in a 0.5µm Agilent CMOS process is demonstrated. The accelerometer motion is sensed by a vertical comb drive designed by controlling the rotor and stator curvature. The polysilicon layer of the CMOS process has been utilized for heating the device structure to a constant temperature, that is higher than the maximum ambient operating temperature. The capacitance detection circuits have temperature independent gain. The D.C. bias stability of the accelerometer improved from 1.9 G/ºC, to 42 mG/ºC, and the sensitivity stability improved from 60% to 18% over a temperature of 70ºC after temperature control.
© 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full paper (PDF) (opens in new window).

This page was generated in 0.012043 seconds at 11:10:03 am EDT on 23 May 2018.

overview | projects | people | publications | intranet | resources         © 1998-2009  Carnegie Mellon