CMU MEMS Laboratory Publication Abstract


in Technical Digest of the 11th International Conference on Solid-State Sensors and Actuators (TRANSDUCERS), pp. 1548-1551, June 10-14, 2001, Munich, Germany.
Copper Interconnect Low-K Dielectric Post-CMOS Micromachining
X. Zhu, H. Lakdawala, H. Luo, S. Santhanam, D. Greve and G. Fedder
A post-CMOS maskless dry etch process has been developed to fabricate MEMS structures compatible with commercial low-K copper interconnect processes. The micromachining in the copper low-k process enables the fabrication of an RF inductor with quality factor of 12 at 7.5 GHz and a variable capacitor operating up to 3 GHz. Reduction of fluorine concentration in the plasma for the low-K dielectric etch solves the metal delamination problems. Argon/oxygen plasma cleaning of fluorine residue from the copper surface greatly reduces the metal erosion when exposed to high humidity.
© 2001 Springer-Verlag. All rights reserved.
Full paper not available from outside CMU

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