CMU MEMS Laboratory Publication Abstract


in Technical Digest of the Solid-State Sensor and Actuator Workshop (Hilton Head), pp. 77-80, June 4-8, 2000, Hilton Head Island, SC, USA.
Post-CMOS Processing For High-aspect-ratio Integrated Silicon Microstructures
H. Xie, L. Erdmann, X. Zhu, K. Gabriel and G. Fedder
We present a new fabrication sequence for integrated-silicon microstructures designed and manufactured in a conventional CMOS process. The sequence employs a post-CMOS deep silicon backside etch, which allows fabrication of high aspect ratio (25:1) and flat MEMS devices with integrated circuitry. A comb-drive actuator and a beam resonator were fabricated using this process sequence. Electrical isolation of single-crystal silicon was realized by using the undercut of the reactive ion etch (RIE) process. The fabricated devices were actuated electrostatically and flatness characterized using interferometric measurements.
© 2000 Transducers Research Foundation. All Rights Reserved.
Full paper (PDF) (opens in new window).

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