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This paper presents a vertical (Z-axis) CMOS-MEMS gyroscope with a measured noise floor of 0.03º/sec/Hz½ and 1% linearity in the range of -360º/sec to 360º/sec. The gyroscope is fully compatible with conventional CMOS processes, which enable the integration of most of the conditioning circuits. It is fabricated in a three-metal-layer 0.5 µm CMOS process followed by a two-step dry etch release. An improved out-of-plane curl matching technique provides the sidewall alignment to 1 µm. A new differential capacitive sensing interface is employed.
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