CMU MEMS Laboratory Publication Abstract

 

	in Great Lakes Symposium on VLSI (GLSVLSI), Apr. 30-May. 2, 2006.
	Synthesis of a Wideband Low Noise Amplifier
	A. Jajoo, M. Sperling and T. Mukherjee ABSTRACT:
	Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first gener¬ation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor.
	© 2006 Association for Computing Machinery. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credits is permitted. To copy otherwise, to republish, to post on servers or to redistribute to lists, require prior specific permission and/or a fee.
	Full paper (PDF) (opens in new window).

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