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CMOS-MEMS tunable capacitors, micromachined inductors and wiring interconnects fabricated in
Jazz 0.35 μm BiCMOS and ST Microelectronics 0.25 μm processes have been modeled. These models were
verified by comparing the simulation and measurement results of first and second generation RF-MEMS
reconfigurable LC-based bandpass filters. The modeled and extracted model parameters matched well.
Third generation RF-MEMS reconfigurable LC-based bandpass filter with CMOS-MEMS tunable
capacitors, micromachined inductors and wiring interconnect models is designed for covering the lowest
three frequency bands of Ultra-Wide Band (UWB) with an insertion loss lower than 4 dB. The filter is fabricated
in ST Microelectronics 0.25 μm process and post-processed in Carnegie Mellon University.
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