|CMU MEMS Laboratory Publication Abstract|
|in M.S. Thesis, August 2005, Carnegie Mellon University, Pittsburgh, PA.|
|A Wide-Band Low Noise Amplifier Synthesis Methodology|
| Three generations of a wide-band Low Noise Amplifier (LNA) are designed in a 0.35 μm
BiCMOS technology. The topology chosen is a noise-canceling topology with shunt resistive feedback for
wide-band matching to 50 Ω. The second generation design was fabricated and measured. It had a
measured gain of 17 dB and a bandwidth of 2.6 GHz. Its Noise Figure is below 3 dB over the LNA
bandwidth, with minimum value of 2.4 dB. It draws 13mA current from a 2.5 V supply. This LNA has an
excellent figure of merit FOM = (S21 × BW)⁄(NF × PDC) compared to the other wide-band LNAs.
Based on the experience gained from the first two design generations, a synthesis-based design strategy is developed. A third generation LNA is synthesized using this strategy. It optimizes between the various noise sources affecting NF with the other parameters involved in the FOM, leading to a LNA that outperforms earlier designs by about 2x.
|© 2005 Carnegie Mellon University, Department of Electrical and Computer Engineering.|
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