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The desire for integrating complete RF systems on a single integrated
circuit is driving innovation in RF circuit design. One challenge in RF IC
design is the implementation of on-chip passive devices such as inductors
and capacitors with high quality factors. In order for tuned RF circuits to
perform well and have good selectivity, linear high Q passive devices are
required. This thesis investigates the feasibility of a MEMS-based
continuously tunable variable capacitor tuning element. Bondiwres are used
as inductors to offer high Q and low phase noise. The capacitor design will
limit the effect of bondwire variablility because of the wide tuning range
offered by the capacitor. The design is in an Hewlett-Packard / Agilent 0.5
micron process, with release using the CMU MEMS poly-release process.
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Full
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