CMU MEMS Laboratory Publication Abstract

 

	in The 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), pp. 2074-2077, June 5-9, 2005, Seoul, Korea.
	Integrated HF CMOS-MEMS Square-Frame Resonators with On-Chip Electronics and Electrothermal Narrow Gap Mechanism
	C. Lo, F. Chen and G. Fedder ABSTRACT:
	A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental and 2nd harmonic, respectively, is introduced, which is the highest resonant frequency reported to date in CMOS-MEMS technology. In-plane CMOS-MEMS resonators have been fabricated directly on a conventional CMOS substrate with on-chip differential amplifiers. To enhance the output motional current, an electrothermal-actuated electrode is designed to reduce the input/output capacitive gap. A 5 µm-thick, 4 µm-wide, 63 µm-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz.
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	Full paper (PDF) (opens in new window).

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