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We present a micro-machining technology which enables MEMS fabrication on standard CMOS with very dense electrical / mechanical integration. Micro-mechanical structures are fabricated alongside circuits on standard 0.5mm and 0.8mm 3-metal CMOS dice using three maskless dry-etch steps. The resulting laminated beams are made of CMOS metal and dielectric layers. Such multi-conductor mechanical structures can carry multiple signals for actuation and sensing. Small gaps facilitate XYZ electrostatic actuation and fine capacitive position sensing. Experiments show that mechanical structures can be integrated 5mm away from circuits, resulting in very low parasitics and better system performance, as well as small die size.
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