CMU MEMS Laboratory Publication Abstract

 

in Proceedings of the NSF/ASME Workshop on Tribology Issues and Opportunities in MEMS (Tribology), pp. 2821-2824, November 9-11, 1997, Columbus, OH, USA.
Integrated MEMS in Conventional CMOS
G. Fedder
ABSTRACT:
This paper provides an overview of fabrication and design of CMOS-based microelectromechanical systems with emphasis on inertial sensor and data storage applications. High-aspect-ratio (4.4:1) microstructures can be fabricated using conventional CMOS processing followed by a sequence of maskless dry-etching steps. The CMOS dielectric and metallization layers, normally used for electrical interconnect, serve a dual function as a composite metal/dielectric structural material. Reactive-ion etching produces near vertical sidewalls, enabling micromechanical beam widths and gap spacings down to 1.2 microns. The process is tailored for design of lateral electrostatic actuators as well as capacitive position and motion sensors. Tight integration of the microstructures with CMOS provides an opportunity to make low-noise sensor interface circuitry, and to include the signal processing needed to manage arrayed sensor-and-actuator systems-on-a-chip. Novel actuator and sensor topologies can be designed by embedding multiple isolated conductors into the microstructures. An additional post-CMOS processing sequence produces platinum tips on the movable microstructures. These tips are being explored for use in probe-based data storage and tunneling sensor applications.
© 1997 Kluwer Academic Publishers. Abstracting is permitted with credit to the source. All other requests for information and reprints should be address to Kluwer Academic Publicshers Order Department via kluwar@wkap.com or phone +1 781 871 6600 )for customers in North and South America) or at services@wkap.nl or phone +31 78 639 23 92 (for customers in all other countries).
Full paper not available from outside CMU


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