CMU MEMS Laboratory Publication Abstract


in M.S. Thesis, August 2003, Carnegie Mellon University, Pittsburgh, PA.
SiGe BiCMOS RF Circuit Design: A Wideband LNA Example
M. Sperling
A wideband amplifier with 15 dB gain and a 3-dB bandwidth of 2.8 GHz implemented in an advanced SiGe bipolar technology is presented. The noise figure is less than 4.4 dB while dissipating only 16 mW from a 2.5-V supply. The resulting figure of merit Gain / (Power * Noise Figure) of 0.213 exceeds those of recently published SiGe and RFCMOS wideband designs. The architecture chosen is a noise-canceling topology with shunt resistive feedback for wideband matching to 50 Ohms. Finally, the importance of modeling test bed parasitics is emphasized in the context of RF circuit design.
© 2003 Carnegie Mellon University, Department of Electrical and Computer Engineering.
Full paper (PDF) (opens in new window).

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