CMU MEMS Laboratory Publication Abstract

 

	in Proceedings of the 13th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 502-507, January 23-27, 2000, Miyazaki, Japan.
	A 1 mG LATERAL CMOS-MEMS ACCELEROMETER
	H. Luo, G. Fedder and R. Carley ABSTRACT:
	This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1mG/Hz½ and a dynamic range larger than 13G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5µm CMOS process followed by a two-step dry etch release. An improved curl matching technique is utilized to solve the out-of-plane curl problem. A new differential amplifier is used for the capacitive sensing interface. The CMOS micromaching process used in this project is described. The design of accelerometer, system schematic applying force-balance feedback and experimental test results are presented.
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