Publications

BOOK CONTRIBUTIONS

Contributor to An Atlas of IC Technology, W. Maly, principal author (Benajmin Cummings, 1987).

 

Four articles in The Encyclopedia of Advanced Materials, D. Bloor, M.C. Flemings, R.J. Brook, and S. Mahajan, editors, (Pergamon Press, 1994): "Bipolar Junction Transistors," pp. 270-274; "Bipolar Transistors, Heterojunction," pp. 274-280; "Metal- Semiconductor Field Effect Transistors," pp. 1550-1555; "Thin Film Transistors," pp. 2847-2852.

 

"Ge_xSi_1-x Epitaxial Growth and Application to Integrated Circuits," invited book chapter in Physics of Thin Films, Volume 23, pp. 1-82, M. Francombe, editor (Academic Press, 1997).

 

"Solid state devices and materials," D.W. Greve, in Our vision: Frontiers in Electrical and Computer Engineering, (R.M. White, editor, pp. 42-47, Department of ECE publication, 1997); also available at http://www.ece.cmu.edu/afs/ece/usr/dwg/public_html/visiona.html.

"UHV/CVD and related growth techniques for Si and other materials," D.W. Greve (in Properties of Crystalline Silicon, EMIS Datareviews Series, R. Hull, editor, INSPEC, 1999).

"Gas-source molecular beam epitaxy of silicon and related materials," D.W. Greve (in Properties of Crystalline Silicon, EMIS Datareviews Series, R. Hull, editor, INSPEC, 1999).

 

"Chemical Vapor Deposition of Group IV Alloys on Silicon," D.W. Greve, Encyclopedia of Materials: Science and Technology, K.H.J. Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer, and S. Mahajan, editors, Elsevier (2001).

 

BOOKS

Field Effect Devices and Applications: Devices for low-power, portable, and imaging systems, undergraduate textbook, (Prentice Hall, 1998).

This book is intended for use at the junior/senior level. Study of the physics of field effect devices is motivated by their systems applications in portable and low power systems. The book uses Mathcad extensively in problems and examples.

INVITED REVIEW PAPERS

"UHV/ CVD Epitaxy of Si and Ge_xSi_1-x," M. Racanelli and D.W. Greve, Journal of Metals, pp. 32-37, October, 1991.

 

"Growth of Epitaxial Germanium-Silicon Heterostructures by Chemical Vapour Deposition," D.W. Greve, Mater. Sci. Engrg. B18, 22-51 (1993).

OTHER

Cover photograph, Science, August 18, 1998 issue (photograph reprinted from "Wurtzite GaN Surface Structures Studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction," A. R. Smith, V. Ramachandran, R. M. Feenstra, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. A 16, 1641 (1998)).
 

REFEREED PUBLICATIONS

"Method for Extending the Range of Low-Frequency Admittance Measurements," D.W. Greve, Rev. Sci. Instrum. 47, 1409 (1976).

"Thermal Diffusivity/ Conductivity of Alumina with a Zirconia Dispersed Phase," D. Greve, N.E. Claussen, D.P.H. Hasselman, and G.E. Youngblood, Bull. Am. Cer. Soc. 56, 514 (1977).

 

"Statistics of Trap Photoemission in MIS Tunnel Diodes," W.E. Dahlke and D.W. Greve, Solid-St. Electron. 22, 893 (1979).

 

"Photoionization Cross Section and Density of Interface States in MOS Structures," D.W. Greve and W.E. Dahlke, Appl. Phys. Lett. 36, 1002 (1980).

 

"Profiling of Optically Active Defects," D.W. Greve and W.E. Dahlke, IEEE Transactions on Electron Devices ED-27, 2152 (1980).

 

"Programming Mechanism of Polysilicon Resistor Fuses," D.W. Greve, IEEE Transactions on Electron Devices ED-29, 719 (1982).

 

"Polysilicon n+pn+ Structures for MOS Redundancy," D.W. Greve and L.V. Tran, IEEE Transactions on Electron Devices ED-29, 1313 (1982).

 

"Microstructure of Programmed n+pn+ Polycrystalline Silicon Antifuses," M.E. Lunnon and D.W. Greve, J. Appl. Phys. 54, 3278 (1983).

 

"Absence of Oxidation in Polysilicon Fuse Links," D.W. Greve, J. Electrochem. Soc. 130, 1616 (1983).

 

"Influence of Hydrogen Implantation on the Resistivity of Polycrystalline Silicon," D.-L. Chen, D.W. Greve, and A.M. Guzman, Appl. Phys. Lett. 57, 1408 (1985).

 

"Feasibility of Silicon-on-Garnet Technology," P.H.L. Rasky, D.W. Greve, M.H. Kryder, and S. Dutta," J. Appl. Phys. 57, 4077 (1985).

 

"Field Enhanced Emission and Capture in Polysilicon pn Junctions," D.W. Greve, P.A. Potyraj, and A.M. Guzman, Solid-State Electronics 28, 1255 (1985).

 

"Effect of Hydrogen Implantation on Polysilicon pn Junctions," D.-L. Chen, A.M. Guzman, and D.W. Greve, IEEE Transactions on Electron Devices ED-33, 270 (1986).

 

"Characterization of Aluminum/ LPCVD Polysilicon Schottky Barrier Diodes," D-L. Chen, D.W. Greve, and A.M. Guzman, Solid- State Electronics 30, 339 (1987).

 

"Solid Phase Epitaxy of LPCVD Amorphous Silicon Films," M.K. Hatalis and D.W. Greve, J. Electrochem. Soc. 134, 2536 (1987).

 

"Interpretation of Capacitance-Voltage Characteristics of Polysilicon Thin Film Transistors," D.W. Greve and V.R. Hay, J. Appl. Phys. 61, 1176 (1987).

 

"Large Grain Polycrystalline Silicon by Low-Temperature Annealing of Low-Pressure Chemical Vapor Deposited Amorphous Silicon Films," M.K. Hatalis and D.W. Greve, J. Appl. Phys. 63, 2260 (1988).

 

"High-Performance Thin-Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films," M.K. Hatalis and D.W. Greve, IEEE Trans. Electron Devices EDL-8, 361 (1987).

 

"Minority Carrier Hole Diffusion Length Measurement in Heavily-Doped Polysilicon-Emitter Structures," D-L. Chen, D.W. Greve, and A.M. Guzman, IEEE Trans. Electron Devices ED-35, 1045 (1988).

 

"Low Temperature Polycrystalline Silicon Thin-Film Transistors for Displays," B.-C. Hseih, M.K. Hatalis, and D.W. Greve, IEEE Trans. Electron Dev. 35, 1842 (1988).

 

"Interfacial Oxide, Grain Size, and Hydrogen Passivation Effects on Polysilicon Emitter Transistors," P.A. Potyraj, D.-L. Chen, M.K. Hatalis, and D.W. Greve, IEEE Trans. Electron Devices 35, 1334 (1988).

 

"Sputter Deposition of YBa₂Cu₃O_6+x on Alumina and the Influence of ZrO₂ Buffer Layers," A. Stamper, D.W. Greve, D. Wong, and T.E. Schlesinger, Appl. Phys. Lett. 52, 1746 (1988).

 

"Characterization of Yttria-Stabilized Zirconium Oxide Buffer Layers for High- Temperature Superconductor Thin Films," J.-W. Lee, T.E. Schlesinger, A.K. Stamper, M. Migliuolo, D.W. Greve, and D.E. Laughlin, J. Appl. Phys. 64, 6502 (1988).

 

"Influence of Y₂O₃-ZrO₂ Buffer Layers on Sputtered Films of YBa₂Cu₃O_6+x," D.W. Greve, A.K. Stamper, T.E. Schlesinger, and M. Migliuolo, Materials Science and Engineering A109, 325 (1989).

 

"Single Target Sputtering of Superconducting Y₁Ba₂Cu₃O_7-d Thin Films on Si (100)," M. Migliuolo, A.K. Stamper, D.W. Greve, and T.E. Schlesinger, Appl. Phys. Lett. 54, 859 (1989).

 

"Microstructure of Superconducting YBa₂Cu₃O_7-d Thin Films on Si and Alumina Substrates with Buffer Layers," J.-W. Lee, M. Migliuolo, A.K. Stamper, D.W. Greve, D.E. Laughlin, and T.E. Schlesinger, J. Appl. Phys. 66, 4886 (1989).

 

"Short Time Electron Cyclotron Resonance Hydrogenation of Poly-Si Thin Film Transistor Structures," R. Ditizio, G. Liu, S.J. Fonash, B.-C. Hseih, and D.W. Greve, Appl. Phys. Lett. 56, 1140 (1990).

 

"The Structure and Electrical Characteristics of Oxidized Semi-Insulating Polycrystalline Silicon (SIPOS)," B.-C. Hseih and D.W. Greve, J. Appl. Phys. 67, 2494 (1990).

 

"Temperature Dependence of Growth of Ge_xSi_1-x by UHV/ CVD Epitaxy," M. Racanelli and D.W. Greve, Appl. Phys. Lett. 56, 2524 (1990).

 

"Construction and Operation of a UHV/ CVD Epitaxial Reactor for Growth of Ge_xSi_1-x," D.W. Greve and M. Racanelli, J. Vac. Sci. Tech. B8, 511 (1990).

 

"Growth Rate of Doped and Undoped Silicon by UHV/ CVD," D.W. Greve and M. Racanelli, J. Electrochem. Soc. 138, 1744 (1991).

 

"Low Temperature Selective Epitaxy by Ultra-High-Vacuum Chemical-Vapor-Deposition from SiH₄ and GeH₄," M. Racanelli and D.W. Greve, Appl. Phys. Lett. 58, 2096 (1991).

 

"in situ Doping of Si and Si_1-xGe_x in Ultra-High Vacuum Chemical Vapor Deposition," M. Racanelli and D.W. Greve, J. Vac. Sci. Technol. B9, 2017 (1991).

 

"Oxidation-induced Defects in Trench-etched Silicon Single Crystals," J.C. Pickering, S. Mahajan, and D.W. Greve, Mater. Sci. and Engrg. B8, 273 (1991).

 

"On-axis Sputter Deposition of Superconducting YBa₂Cu₃O_7-d on Si (100)," A.K. Stamper, D.W. Greve, and T.E. Schlesinger, J. Vac. Sci. Technol. A9, 2158 (1991).

 

"Alternate Surface Preparation Approaches for UHV/CVD Epitaxy," M. Racanelli, D.W. Greve, M.K. Hatalis, and L.J. van Yzendoorn, J. Electrochem. Soc. 138, 3783 (1992).

 

"Incorporation of Boron into UHV/CVD-Grown Germanium-Silicon Epitaxial Layers," D.W. Greve and M. Racanelli, J. Electron. Mater. 21, 593 (1992).

 

"Photoluminescence and X-Ray Diffraction Study of Highly Uniform Si and Ge_xSi_1-x Epitaxial Layers" D.W. Greve, R. Misra, T.E. Schlesinger, and G. McLaughlin, Thin Solid Films 222, 46 (1992).

 

"Uniformity of Ge_xSi_1-x Epitaxial Layers Grown by Ultra-High Vacuum Chemical-Vapor Deposition," D.W. Greve, G. McLaughlin, M.A. Capano, and M. Racanelli, Appl. Phys. Lett. 62, 726 (1993).

 

"Photoluminescence Characterization of UHV/CVD Grown Multiquantum Wells," R. Misra, D.W. Greve, and T.E. Schlesinger, J. Electron. Mater. 22, 399 (1993).

 

"Characterization of Undoped Multiple Quantum Well Structures," R. Misra, R. Strong, D.W. Greve, and T.E. Schlesinger, J. Vac. Sci. Technol. B11, 1106 (1993).

 

"Thermal Chemical Vapor Deposition of Semiconductors for Thin Film Transistor Applications," D.W. Greve, Microelectronic Engineering 25, 337 (1994).

 

"UHV/CVD Epitaxy of Silicon and Germanium-Silicon Heterostructures," D.W. Greve, R. Misra, R. Strong, and T.E. Schlesinger, J. Vac. Sci. Technol. A12, 979 (1994).

 

"Characterization of Cobalt Annealed on Silicon-Germanium Epilayers," F. Lin, G. Sarcona, M.K. Hatalis, A.F. Cserhati, E. Austin, and D.W. Greve, Thin Solid Films 250, 20 (1994).

 

"Growth of Epitaxial Ge_xSi_1-x for Infrared Detectors by UHV/CVD," S. Vyas, D.W. Greve, T.J. Knight, R.M. Strong, and S. Mahajan, Vacuum 46, 1065 (1995).

 

"Infrared Absorption in Ge_xSi_1-x Quantum Wells, R. Misra, D.W. Greve, and T.E. Schlesinger, Appl. Phys. Lett. 67, 2548 (1995).

 

"Process Control based on Quadrupole Mass Spectrometry," D.W. Greve, T.J. Knight, X. Cheng, B.H. Krogh, M.A. Gibson, and J. LaBrosse, J. Vac. Sci. Technol. B14, 489 (1996).

 

"Real-time multivariable control of PECVD silicon nitride film properties," T.J. Knight, D.W. Greve, X. Cheng, and B.H. Krogh, IEEE Transactions on Semiconductor Manufacturing 10, 137 (137).

 

"GeSi infrared detectors," R. Strong, D.W. Greve, R. Misra, M. Weeks, and P. Pellegrini, Thin Solid Films 294, 343 (1997).

 

"Ge_xSi_1-x infrared detectors I: Absorption in multiple quantum well and heterojunction internal photoemission structures," R. Strong, R. Misra, D.W. Greve, and P.C. Zalm, Journal of Applied Physics 82, 5191 (1997).

 

"Ge_xSi_1-x infrared detectors II: Carrier escape probability and detector performance," R. Strong D.W. Greve, P. Pellegrini, and M. Weeks, Journal of Applied Physics 82, 5199 (1997).

 

"Nucleation of boron nitride on Ni(100) surfaces," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Mater. Sci. Engrg. B46, 84 (1997).

 

"Decomposition of B₂H₆ on Ni(100), R.M. Desrosiers, D.W. Greve, and A.J. Gellman, J. Vac. Sci. Technol. A15, 2181 (1997).

 

"Nucleation of boron nitride thin films on Ni(100)," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Surface Science 382, 35 (1997).

 

"Growth of GaBN ternary solutions by organometallic vapor phase epitaxy", A.Y. Polyakov, M. Shin, M. Skowronski, D.W. Greve, R.G. Wilson, A.V. Govorkov, and R.M. Desrosiers, J. Electron. Mater. 26, 237 (1997).

 

"On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy", A.Y. Polyakov, M. Shin, J.A. Freitas, M. Skowronski, D.W. Greve, and R.G. Wilson, J. Appl. Phys. 80, 6349 (1996).

 

"Ion implantation of Si, Mg, and C into Al_0.12Ga_0.88N", A.Y. Polyakov, M. Shin, M. Skowronski, R.G. Wilson, D.W. Greve, S.J. Pearton, Solid-State Electron. 41, 703 (1997).

 

"Growth of AlBN solid solutions by organometallic vapor phase epitaxy", A.Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D.W. Greve, R.G. Wilson, J. Appl. Phys. 81, 1715 (1997).

 

"High resistivity Al_xGa_1-xN layers grown by MOCVD", A.Y. Polyakov, M. Shin, D.W. Greve, M. Skowronski, and R.G. Wilson, MRS Internet Journal (Nitride Semiconductor Research), [http://nsr.mij.mrs.org/1/36/] (1996).

 

"Reconstructions of the GaN (000_1) surface," A.R. Smith, R.M. Feenstra, D.W. Greve, J. Neugebauer, and J.E. Northrup, Phys. Rev. Lett. 79, 3934 (1997).

 

"Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction," A.R. Smith, V. Ramachandran, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J.E. Northrup, J. Vac. Sci. Technol. A16, 1641 (1998).

 

"Preparation of atomically flat surfaces on silicon carbide using hydrogen etching," V. Ramachandran, M.F. Brady, A.R. Smith, R.M. Feenstra, and D.W. Greve, J. Electron. Mat. 2, 7, 308 (1998)..

 

"Determination of Wurtzite GaN Lattice Polarity Based on Surface Reconstruction," A.R. Smith, R.J. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J.E. Northrup, Appl. Phys. Lett. 72, 2114 (1998).

 

"Scanning Tunneling Microscopy of the GaN(000-1) Surface," A.R. Smith, R.M. Feenstra, D.W. Greve, J. Neugebauer, and J.E. Northrup, Appl. Phys. A 66, S947 (1998).

 

"Wurtzite GaN Surface Structures studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction," J. Vac. Sci. Technol. A16, 1641 (1998).

 

"Reconstructions of GaN(0001) and (000-1) Surfaces: Ga-rich Metallic Structures," A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J.E. Northrup, J. Vac. Sci. Technol. B16, 2242 (1998).

 

"Epitaxial Si_1-yC_y Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition," A.C. Mocuta and D.W. Greve, J. Appl. Phys. 85, 1240 (1999).


"Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001), A. R. Smith, V. Ramachandran, R.M. Feenstra, D.W. Greve, A. Ptak, T.H. Myers, W.L. Sarney, L. Salamanca-Riba, M.-S. Shin, and M. Skowronski, MRS Internet J. Nitride Semicond. Res. 3,12 (1998). [http://nsr.mij.mrs.org/3/12/]
 
"GaN(0001) Surface Structures Studied Using Scanning Tunneling Microscopy and First Principles Total Energy Calculations," A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Surf. Sci. 423, 70 (1999).

"Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy," Huajie Chen, A. R. Smith, R. M. Feenstra, D. W. Greve, and J. E. Northrup," MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (1999). [http://nsr.mij.mrs.org/4S1/G9.5/].

"Carbon Incorporation in SiGeC Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition," A. C. Mocuta and D. W. Greve (J. Vac. Sci. Technol., in press).

"Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)," V. Ramachandrana, A. R. Smith, R. M. Feenstra and D. W. Greve, J. Vac. Sci. Technol.A 17, 1289 (1999).


"Inversion of wurtzite GaN(0001) by exposure to magnesium," V. Ramachandran R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999).


"Heterostructure Si_1-x-yGe_xC_y-channel p-MOSFETs compatible with CMOS processing,"  A.C. Mocuta and D.W. Greve, IEEE Electron Device Letters, vol.21, no.6 p. 292-4 (2000).

 

"Structure of Clean and Arsenic-covered GaN(0001) Surfaces," V. Ramachandran, C. D. Lee, R. M. Feenstra, A. R. Smith, J. E. Northrup, and D. W. Greve, J. Crystal Growth, 209, 355-63 (2000).

 

"Reconstructions of GaN and InGaN Surfaces," R. M. Feenstra, Huajie Chen, and V. Ramachandran, A. R. Smith and D. W. Greve, Applied Surface Science, vol.166 p. 165-72 (2000).

 

"Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy," V. Ramachandran, R. M. Feenstra, W. L. Sarney and L. Salamanca-Riba, Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), vol.18, no.4, pt.1-2 p. 1915-18 (2000).

 

"Surface activity of magnesium during GaN molecular beam epitaxial growth," V. Ramachandran, R. M. Feenstra, J. E. Northrup, and D. W. Greve (submitted to the MRS Internet J. Nitride Semicond. Res.).

 

"TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE," W. L. Sarney, L. Salamanca-Riba, V. Ramachandran, R. M. Feenstra, and D. W. Greve, (submitted to the MRS Internet J. Nitride Semicond. Res.).

 

"Single Chip Computers With MEMS-Based Magnetic Memory," L.R. Carley, J.A. Bain, G.K. Fedder, D.W. Greve, D.F. Guillou, M.S.C. Lu, T. Mukherjee, S. Santhanam, L. Abelmann, and S. Min, J. Appl. Phys. 87, 6680-5 (2000).

 

"Surface morphology of GaN surfaces during molecular beam epitaxy, R.M. Feenstra, H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T. Zywietz, J. Neugebauer, and D.W. Greve, Surface Review and Letters 7, 601-6 (2000).

 

Comment on "Structures of GaN(0001)-(2*2), -(4*4), and -(5*5) surface reconstructions" [with reply], V. Ramachandran, C.D. Lee, R.M. Feenstra, A.R. Smith, D.W. Greve, Qi-Zhen Xue, Q.K. Xue, S. Kuwano, J.T. Sadowski, K.F. Kelly, T. Sakurai, and T. Ohno, Phys. Rev. Lett. 84, 4014-15 (2000).

 

"Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy," H. Chen, R.M. Feenstra, J.E. Northrup, T. Zywietz, J. Neugebauer, and D.W. Greve, J. Vac. Sci. Technol. B18, 2284-9 (2000).

 

"Si-Ge-C growth and devices," Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland), Materials Science & Engineering B (Solid-State Materials for Advanced Technology), vol.B87, no.3 p. 271-6 (2001).

 

"Control of stress and plasma-induced heating during DC magnetron sputtering of permalloy films for MEMS applications," S. Min, J.A. Bain, and D.W. Greve, (to be published in J. Appl. Phys.).

 

"Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy," Lee, C.D.; Ramachandran, V.; Sagar, A.; Feenstra, R.M.; Greve, D.W.; Sarney, W.L.; Salamanca-Riba, L.; Look, D.C.; Song Bai; Choyke, W.J.; Devaty, R.P., Journal of Electronic Materials, 30, 162-9 (2001).

CONFERENCE PROCEEDINGS

"Photoemission from Interface States in MOS Structures," D. W. Greve and W. E. Dahlke, in Insulating Films on Semiconductors, Inst. Phys. Conf. Ser. 50, 107 (1979).

 

"Photoionization of States in MIS Tunnel Diodes," W.E. Dahlke and D.W. Greve, Proceedings of the Second Biennial University/ Industry/ Government Microelectronics Symposium, Lubbock, Texas (1979).

 

"Measurement of Tunnelling into Interface States," W.E. Dahlke and D.W. Greve, The Physics of MOS Insulators, pp. 232-235, (Editors G. Lucovsky, S.T. Pantelides, and F.L. Galeener, (Pergamon Press, 1980).

 

"Programming Mechanism of Polysilicon Fuse Links," D.W. Greve, Proceedings of the 1981 International Electron Devices Meeting, pp. 70-73.

 

"Polysilicon Junctions for VLSI," D.W. Greve, D.-L. Chen, P.A. Potyraj, and A.M. Guzman, 22nd Annual Technical Meeting, Society of Engineering Science, (The Pennsylvania State University, October, 1985).

 

"Integration of Semiconductor and Magnetic Bubble Devices: SOI on Garnet," D.W. Greve, M.H. Kryder, and P.H.L. Rasky, Mat. Res. Soc. Symp. Proc. 53, 375 (1986).

 

"TEM studies of the amorphous/ crystalline transition in silicon and application to electronic devices," D.W. Greve and M.K. Hatalis, Inst. Phys. Conf. Ser. 87, 479 (1987).

 

"Minority carrier transport mechanisms in polysilicon emitter transistors," D.-L. Chen, D.W. Greve, and A.M. Guzman, Proc. Seventh Biennial University/ Government/ Industry Symposium, (Rochester, NY, 1987).

 

"Diffusion length in polysilicon and its influence on performance of polysilicon- emitter transistors," D.W. Greve, D.-L. Chen, and A.M. Guzman, Proc. 1987 Bipolar Circuits and Technology Meeting, (Minneapolis, MN).

 

"Emitter resistance in polysilicon emitter transistors and the influence of interfacial oxides," P.A. Potyraj and D.W. Greve, Proc. 1987 Bipolar Circuits and Technology Meeting, (Minneapolis, MN).

 

"Crystallization of amorphous LPCVD silicon films and application to bipolar and thin film transistors," M.K. Hatalis and D.W. Greve, Mat. Res. Soc. Symp. Proc. 106, 335 (1987).

 

"Hot-carrier induced excess current in polysilicon emitter bipolar transistors," D.W. Greve and T.Y. Chou, Proc. Symp. on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp. 427-437 (The Electrochemical Society, Pennington, NJ 1989).

 

"Hot electron effects in semi-insulating polysilicon (SIPOS) and polysilicon thin film transistors," B.-C. Hseih and D.W. Greve, Proc. Symp. on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp. 438-448 (The Electrochemical Society, Pennington, NJ 1989).

 

"Calculated high frequency performance of a npn Si_1-xGe_x HBT," M. Racanelli and D.W. Greve, Proceedings of the IEEE/ Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, pp. 150- 159 (IEEE, Piscataway, NJ, 1989).

 

"Growth and Characterization of Epitaxial Ge_xSi_1-x Using UHV/ CVD," D.W. Greve and M. Racanelli, Semiconductor Silicon 1990, pp. 230-238, (H.R. Huff, K.G. Barraclough, and H. Chikawa, eds., The Electrochemical Society, Pennington, NJ 1990).

 

"Growth of Epitaxial Layers of Ge_xSi_1-x by UHV/CVD," M. Racanelli and D.W. Greve, MRS Symposium Proceedings Vol. 198: Epitaxial Heterostructures, pp. 527-532 (Materials Research Society, Pittsburgh, PA, 1990).

 

"Superconducting YBa₂Cu₃O_7-d Thin Film and Thin Film Device Fabrication on Silicon Substrates," A.K. Stamper, D.W. Greve, and T.E. Schlesinger, pp. 79-84, (in Proceedings of the 1990 International Conference on Electronic Materials, Newark, NJ, September, 1990).

 

"Doping of UHV/CVD GeSi Epitaxial Layers," M. Racanelli and D.W. Greve, pp. 513-518, in Proceedings of the 1990 International Conference on Electronic Materials, (IEEE, Newark, NJ, 1990).

 

"In situ Doping of Si and SiGe in UHV/CVD," D.W. Greve and M. Racanelli, pp. 20-25, (in Proceedings of the First Topical Symposium on Silicon Based Heterostructures, Toronto, Canada, October 8, 1990).

 

"In situ TEM Studies of the Growth of Strained Si_1-xGe_x by Solid Phase Epitaxy," D.C. Paine, D.H. Howard, N. Evans, D.W. Greve, M. Racanelli, and N.G. Stoffel, (in Proceedings of the Symposium on Thin Film and Surface Microstructure, Materials Research Society Fall Meeting, Boston, MA, November, 1990).

 

"Kinetics of Thermal Cleaning for Silicon and Germanium-Silicon Epitaxy," M. Racanelli and D.W. Greve, Proc. Second. Int'l. Symposium on Cleaning Technology in Semiconductor Device Manufacturing, pp. 461-468, (The Electrochemical Society, Pennington, NJ, 1992).

 

"Comparison of Mesa-Etched and Ion-Implanted Ge_xSi_1-x Heterojunction Bipolar Transistors," D.W. Greve and M. Racanelli, in Proc. Symposium on Defect Engineering in Semiconductor Growth, Processing, and Device Technology, pp. 785-90 (Materials Research Society, Pittsburgh, PA, 1992)..

 

"Growth and Characterization of Ge_xSi_1-x Multiple Quantum Well Structures," D.W. Greve, R. Misra, M.A. Capano, and T.E. Schlesinger, Proc. Symposium on Mechanisms of Epitaxial Growth, pp. 365-370, (Materials Research Society, Pittsburgh, PA, 1992).

 

"Electrical and Structural Properties of Cobalt Annealed on Silicon-Germanium Epilayers," G. Sarcona, F. Lin, M.K. Hatalis, A.F. Cserhati, E. Austin, and D.W. Greve, in Semiconductor Heterostructures for Photonic and Electronic Applications Symposium," pp. 647-52 (Materials Research Society, Pittsburgh, PA, 1993).

 

"Characterization of Doped Ge_xSi_1-x Multiple Quantum Well Structures for Far-IR Detectors," R. Misra, D.W. Greve, R. Strong, and T.E. Schlesinger, Proceedings of the Spring, 1993 MRS Meeting, Symposium on Infrared Detectors- Materials, Processing, and Devices, pp. 267-272, (Materials Research Society, Pittsburgh, PA, 1994).

 

"Kinetics of Epitaxial Layer Growth from Silane on (100) Silicon, D.W. Greve, Proceedings of the Spring, 1993 MRS Meeting, Symposium on Common Themes and Mechanisms of Epitaxial Growth, pp. 237-242, (Materials Research Society, Pittsburgh, PA, 1993).

 

"Thermal Chemical Vapor Deposition of Semiconductors for Thin Film Transistor Applications," D.W. Greve (inProceedings of the Symposium on Integrated Processing for Micro- and Opto-Electronics, pp. 337-344, European MRS, May, 1993, also published in Microelectronic Engineering).

 

"Photoluminescence and X-Ray Diffraction Study of Highly Uniform Si and Ge_xSi_1-x Epitaxial Layers," D.W. Greve, R. Misra, T.E. Schlesinger, and G. McLaughlin, in Proceedings of the Symposium on SiGe Based Technologies, pp. 46-51, (European Materials Research Society Meeting, May, 1992, also published in Thin Solid Films).

 

"Efficient Simulation of Polysilicon Emitter Contacts for Manufacturing Applications," M. Johnson, A.J. Strojwas, and D.W. Greve, in Proceedings of SRC TECHCON, (Atlanta, GA, September, 1993).

 

"Limitations of electrical test information: a case study with polysilicon emitter contacts," M. Johnson, A.J. Strojwas, D.W. Greve, R.A. Reuss, and A. Flowers, Proc. 1993 International Conference on Microelectronic Test Structures, pp. 237-40 (IEEE, New York, NY, 1993).

 

"Characterization of SiO₂ Films Deposited from the Liquid Phase at 40 C," D.W. Greve and P.K. Banh, Proceedings of the Active Matrix Liquid Crystal Displays Symposium, pp. 68- 71 (Bethlehem, PA, October, 1993).

 

"Multivariable Control of Plasma Enhanced Chemical Vapor Deposition Using Real-Time Mass Spectroscopy," in Proc. 32nd Allerton Conference on Communication, Control, and Computing, (Urbana- Champaign, IL, September, 1994).

 

"GeSi Infrared Detectors using Selective Deposition," R. Strong, D.W. Greve, M.M. Weeks, in Proceedings of the Symposium on Silicide Thin Films- Fabrication, Properties, and Applications, pp. 443-8, (Materials Research Society, Pittsburgh, PA, 1995).

 

"Ge_xSi_1-x Heterojunction Internal Photoemission Structures by Ultra-High Vacuum Chemical Vapor Deposition," R. Strong, D.W. Greve, T.E. Schlesinger, M.M. Weeks, and P.W. Pellegrini, Proceedings of the Symposium on Strained Layer Epitaxy- Materials, Processing, and Devices, pp. 339- 344 (Materials Research Society, Pittsburgh, PA, 1995)

 

"Decomposition of Diborane and Ammonia on Ni(100) Surfaces," R.M. Desrosiers, A.J. Gellman, D.W. Greve, and C.F. McFadden, in Diamond Materials IV, pp. 330-335 (The Electrochemical Society, Pennington, NJ, 1995).

 

"Ge_xSi_1-x infrared detectors grown by ultrahigh-vacuum chemical-vapor deposition for focal-plane arrays," R. Strong, D.W. Greve, T.E. Schlesinger, M. Weeks, and P. Pellegrini, (extended abstract in CLEO 1995 Technical Digest, pp. 357-358).

 

"Application of Sampling Quadrupole Mass Spectrometry to Multivariable Process Control," T.J. Knight, X. Cheng, B.H. Krogh, D.W. Greve, and M.A. Gibson, Proceedings of the Symposium on Process Control, Diagonistics, and Modeling in Semiconductor Manufacturing, pp. 157-166 (The Electrochemical Society, Pennington, NJ, 1995).

 

"Growth of AlBN solid solution by OMVPE", M. Shin, A.Y. Polyakov, W. Qian, M. Skowronski, D.W. Greve, and R.G. Wilson, (Mat. Res. Soc. Symp. Proc. 1997, in press).

 

"Studies of electrically and recombination active centers in undoped GaN grown by OMVPE", A. Y. Polyakov, A.V. Govorkov, N.B. Smirnov, M. Shin, M. Skowronski, and D.W. Greve, (Mat. Res. Soc. Symp. Proc. 1997, in press).

 

"High resolution X-ray diffraction analysis of GaN-based heterostructures grown by OMVPE", M. S. Goorsky, A.Y. Polyakov, M. Skowronski, M. Shin, and D.W. Greve, (Mat. Res. Soc. Symp. Proc., 1997, in press).

 

"System identification methods for plasma enhanced chemical vapor deposition," M. Gibson, E. Ferreira, X. Cheng, T. Knight, D. Greve, B. Krogh, in Preprints of the 13th IFAC World Congress, Vol M, pp. 319-324, (San Francisco, July, 1996).

 

"Real-time control of PECVD silicon nitride film properties, Proc. Eleventh International Symposium on Plasma Processing," T.J Knight, D.W. Greve, X. Cheng, and B.H. Krogh, pp. 688-699, (Electrochemical Society, Pennington, NJ, 1996).

 

"Factors influencing the electrical and optical properties of AlGaN layers on sapphire", M. Shin, A.Y. Polyakov, M. Skowronski, D.W. Greve, R.G. Wilson, J. A. Freitas, Mat. Res. Symp. Proc. 423, 643 (1996).

 

"The influence of hydrogen plasma passivation on electrical and optical properties of AlGaN samples grown on sapphire", A.Y. Polyakov, M. Shin, S.J. Pearton, M. Skowronski, D.W. Greve, J. A. Freitas, Mat. Res. Soc. Symp. Proc. 423, 607 (1996).

 

"Scanning Tunneling Microscopy of the GaN (000_1) surface," A.R. Smith, R.M. Feenstra, D.W. Greve, J. Neugebauer, and J.E. Northrup," (submitted for Proc. STM-97 Conference).

 

"Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC," A.R. Smith, V. Ramachandran, R.M. Feenstra, D.W. Greve, J. Neugebauer, J.E. Northrup, M. Shin, and M. Skowronski, (to be published in Proc. Fall MRS, Boston, MA, December, 1997).

 

"Factorial Experiment on CMOS-MEMS RIE Post Processing," X. Zhu, D.W. Greve, R. Lawton, N. Presser, and G.K. Fedder, (to appear in Proc. Microstructures and Microfabricated Systems IV, Electrochemial Society Fall Meeting, Boston, MA, November, 1998).

"Carbon Incorporation in Si_1-yC_y Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition," A.C. Mocuta and D.W. Greve, (to appear in Proc. MRS Spring Meeting, San Francisco, CA, April, 1998).

"Improved Process window using Low-carbon Ge_xSi_1-x-yC_y Epitaxial Layers," A. Mocuta, D.W. Greve, and R.M. Strong, (to appear in Proc. 1998 MRS Fall Meeting, Boston, MA).

"Effect of Carbon Predeposition on Nucleation of Quantum Dots," Q. Zhao and D.W. Greve (CVD XV-Proceedings of the fifteenth international symposium and chemical vapor deposition, pp. 126-130 (The Electrochemical Society, 2000).

"Investigation of Epitaxial Lateral Overgrowth on Germanium Quantum Dots," D.W. Greve and Q. Zhao, Proceedings of the MRS Spring Meeting, Spring, 2001 (published but not indexed yet).

Oppenheim, I. J., Jain, A., and Greve, D. W., "A MEMS Ultrasonic Transducer for Resident Monitoring of Steel Structures," SPIE Smart Structures Conference SS05: Systems for Bridges, Structures, and Highways, San Diego, March 2002.

INVITED CONFERENCE PRESENTATIONS

(Items marked * also appear under CONFERENCE PROCEEDINGS; contributed conference presentations are not included below)

 

"Optical Studies of MOS Interface States," D.W. Greve and W.E. Dahlke, Gordon Conference on MOS Systems, Tilton School, Tilton, NH (July, 1980).

 

"Polysilicon Junctions for VLSI," D.W. Greve, D.-L. Chen, P.A. Potyraj, and A.M. Guzman, 22nd Annual Technical Meeting, Society of Engineering Science, University Park, PA (1985).*

 

"Integration of Semiconductor and Magnetic Bubble Devices: SOI on Garnet," D.W. Greve, M.H. Kryder, and P.H.L. Rasky, Materials Research Society Fall Meeting, Boston, MA (1985).*

 

"In situ Doping of Si and SiGe in UHV/CVD," D.W. Greve and M. Racanelli, 37th National Symposium of the American Vacuum Society, Toronto, Canada, (October 8, 1990).*

 

"Photoluminescence and X-Ray Diffraction Study of Highly Uniform Si and Ge_xSi_1-x Epitaxial Layers" D.W. Greve, R. Misra, T.E. Schlesinger, and G. McLaughlin, European Materials Research Society Meeting, Symposium on SiGe Based Technologies (May, 1992, Strasbourg, France).*

 

"Thermal Chemical Vapor Deposition of Semiconductors for Thin Film Transistor Applications," D.W. Greve, Integrated Processing Symposium, European Materials Research Society Meeting, (May, 1993, Strasbourg, France).*

 

"UHV/CVD Epitaxy of Silicon and Germanium-Silicon Heterostructures," D.W. Greve, R. Misra, R. Strong, and T.E. Schlesinger, Electronic Materials: Session on Chemical Routes to Group IV Epitaxy, 40th Symposium of the American Vacuum Society, (Orlando, FL, November, 1993).

 

"Growth and optimization of Ge_xSi_1-x Heterostructures for Long-wave Infrared Detectors," presented at the Workshop on Growth and Device Applications of Si-Ge-C Alloys, University of Texas (April 24-25, 1997, Austin, TX).

 

"Mass spectrometer sensing and control of plasma-enhanced silicon nitride deposition," T. Knight, D.W. Greve, X. Cheng, and B.H. Krogh, Fourth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, Electrochemical Society Spring Meeting, May, 1997, Montréal, Canada).*

 

"Nanoelectronics," Symposium on Nanoscale and Mesocale Enabling Materials and Phenomena, University of Pittsburgh, Pittsburgh, PA, October 12, 2000.


"Si-Ge-C Growth and Devices," 2001 Lawrence Symposium on Critical Issues in Epitaxy, Scottsdale, AZ, January 3-6 (2001).

 

"Silicon-Germanium-Carbon Growth and Devices," NSF-ECS/ EPSCoR National Grantees Conference on Electronics, Photonics, and Device Technologies (EPDT), University of Arkansas, Fayetteville, AK (August 16, 2001).

SEMINARS (recent)

"Germanium-Silicon Strained-Layer Epitaxy and Applications," Seminario Departmento de Fisica, Seccion Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politechnico Nacional, Mexico City, Mexico, March 22, 1995.

 

"Low Temperature Epitaxial Growth of Silicon and Ge_xSi_1-x," Westinghouse Advanced Technology Laboratories, Baltimore, MD, July 6, 1995.

 

"Extending Silicon Integrated Circuit Technology with Germanium-Silicon Epitaxy," Carnegie Mellon University ECE Department Graduate Seminar, October 12, 1995.

 

"Growth and optimization of Ge_xSi_1-x heterostructures for far infrared detectors," Rome Laboratory, Hascom AFB, MA, September 30, 1996.

 

"Growth and optimization of Ge_xSi_1-x heterostructures for far infrared detectors," Electronic Materials Seminar, MIT, Cambridge, MA, October 1, 1996.

 

"Growth and optimization of Ge_xSi_1-x heterostructures for far infrared detectors," informal seminar, Department of Physics and Measurement Technology, Linköping University, Linköping, Sweden (October, 1996).

 

"Extending silicon integrated circuit technology with germanium-silicon epitaxy," Department of Electrical Engineering Seminar, University of Pittsburgh, (February 3, 1997, Pittsburgh, PA).

 

"Germanium-silicon epitaxy and devices," Distinguished Speakers Seminar Series, Departement of Computer Science and Electrical Engineering, West Virginia University (September 16, 1997).

"Growth and Applications of Gallium Nitride, Lehigh University EECS Department Seminar Series, (April 2, 1998).
 
"Germanium-silicon epitaxy and devices," informal presentation to group of Dr. Wyon, CEA/LETI, Grenoble, France (August 3, 1998).

"Can carbon make silicon better??," presented at Northrop Grumman STC (Pittsburgh, PA, October, 1998), and Northrop Grumman ATL (Baltimore, MD, November, 1998).

"Growth and Surfaces of Gallium Nitride," LEOS seminar at CHTM, University of New Mexico, (Albuquerque, NM, January 22, 1999).

"Germanium-silicon epitaxy and devices," presentation at Mitsubishi Company, (Osaka, Japan, March 24, 1999).

"Germanium-silicon epitaxy and devices," presentation at Asahi Chemical Company, (Fuji, Japan, March 26, 1999).

"The Y2.01K crisis, or, is there anything after the MOSFET?," Center for Design Automation, Carnegie Mellon University, (April 21, 1999).

"Si_1-x-yGe_xC_y Growth and Devices," informal seminar, Department of Electrical Engineering, University of Delaware, (May 21, 1999).

"Germanium-silicon epitaxy and devices," presentation at Essential Research, (Cleveland, Ohio, June 7, 1999).

"Si_1-xGe_x and Si_1-x-yGe_xC_y Growth and Application to Devices," four informal seminars at various locations in Taiwan, (December 21-23, 1999).

"Heterojunctions on silicon (finally)," Lehigh University, Department of EECS, (Bethlehem, PA, March 9, 2000).

"Heterojunctions on silicon (finally)," University of Washington, Department of Electrical Engineering?, (Pullman, WA, April 7, 2000).

"Recent results on SiGeC growth and devices," IMRE, Singapore, (March 20, 2000).

"Recent results on SiGeC growth and devices," Cambridge University Department of Engineering, (March 24, 2000).

"Si_1-xGe_x and Si_1-x-yGe_xC_y Growth and Application to Devices," IQE, Bethlehem, PA, (May 26, 2000).

"Nanoscale Electronics," The First Carnegie Mellon Workshop on Interdisciplinary Nanotechnology Research, Carnegie Mellon University, August 1, 2001).

"Nanoelectronics," Physics Undergraduate Colloquim, Carnegie Mellon Department of Physics, (November 15, 2001).

CONTRIBUTED CONFERENCE PRESENTATIONS

Available on request.

 
OTHER ACTIVITIES (recent)

Co-chairman, Quantum Devices Session at Silicon- Based Heterostructures II, American Vacuum Society Fall Meeting, (Chicago, IL, November, 1992).

 

Co-chairman, Session on Integrated Processing for Optoelectronics, European MRS, (Strasbourg, France, May, 1993).

 

Chairman, Session at the Active Matrix Liquid Crystal Displays Symposium, (Bethlehem, PA, October, 1993).

 

NSF review panel, Solid State Microstructures SBIR grants (Washington DC, October, 1993).

 

NSF Panel for Solid State and Microstructures Program, (Washington DC, May 24, 1994).

 

NSF SBIR Panel (Washington, DC, 1995).

 

Co-chairman, session on GeSi materials and devices, Materials Research Society Spring Meeting, (April, 1996, San Francisco, CA).

 

Attended ABET/EAC Program Evaluator Training, Milwaukee, April, 1997 (application for appointment as an evaluator is pending).

 

Session co-chair, Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, (Electrochemical Society Spring Meeting, Montréal, Canada, April, 1997).

(Last update March, 2002)