Data Files


Chapter 3-The MOS Capacitor
_information on the data below... 

_C(V) data for problem 7 

_C(V) data for problem 10

Chapter 4-Charge-coupled Devices
_C(V) data for problem 8

Chapter 5-The MOSFET
_information on the data below...


NMOS devices

_N402S0 nFET, 40/2, VBS=0 V 

  N402S1 nFET, 40/2, VBS=-1 V * 

_N402S2 nFET, 40/2, VBS=-2 V 

_N404S0 nFET, 40/4, VBS=0 V 

_N404S1 nFET, 40/4, VBS=-1 V 

_N404S2 nFET, 40/4, VBS=-2 V 

_N4010S0 nFET, 40/10, VBS=0 V 

_N4010S1 nFET, 40/10, VBS=-1 V *

_N4010S2 nFET, 40/10, VBS=-2 V


PMOS devices

_P402S0 pFET, 40/2, VBS=0 V 

_P402S1 pFET, 40/2, VBS=1 V 

_P402S2 pFET, 40/2, VBS=2 V 

_P404S0 pFET, 40/4, VBS=0 V 

_P404S1 pFET, 40/4, VBS=1 V 

_P404S2 pFET, 40/4, VBS=2 V 

_P4010S0 pFET, 40/10, VBS=0 V 

_P4010S1 pFET, 40/10, VBS=1 V 

_P4010S2 pFET, 40/10, VBS=2 V
These particular data sets exhibit significant noise due to poor contacts. This is most visible when differentiating the data (as when determining the gate voltage dependence of the mobility). Analyses which do not involve differentiation should still be fairly reliable.