Electrical & Computer Engineering     |     Carnegie Mellon

Saturday, March 15, 12:00-1:00 p.m. HH-1112

David Harame
Manager Simulation, Modeling & Design Kits
IBM, Essex Junction, VT

Status and Trends in SiGE BiCMOS Technology

SiGe BiCMOS is an advanced analog and mixed signal technology for applications in wireless, wired, storage, and test applications. This talk will survey the current status of SiGe BiCMOS in IBM. The talk will begin by identifying some key technology attributes that differentiate the SiGe HBT from other competitors. The IBM SiGe technology roadmap will be discussed. The 0.25 microns SiGe BiCMOS process will be described with cross sections and SEM micrographs. Some 0.5 and 0.25um SiGe BiCMOS products, currently in manufacturing, will be shown with a focus on demonstrating the integration and performance capability of the technology. The 0.18um technology with fT's > 100 GHz will be shown followed by a discussion on scaling issues for passives and the SiGe HBT. A final section on RF compact models and design kits will conclude the talk.

D.L. Harame (S'77-M'83) was born in Pocatello, ID, in 1948. He received the B.A. degree in zoology from the University of California, Berkeley, in 1971, and the M.S. degree in zoology from Duke University, Durham, NC, 1973. He received the M.S. degree in electrical engineering from San Jose State University, San Jose, CA, in 1976, and the M.S. degree in materials science and the Ph.D. in electrical engineering, both from Stanford University, Stanford, CA in 1984. He joined IBM's bipolar technology group at the IBM T.J. Watson Research Center, in Yorktown Heights, NY, in 1984 where he worked on the fabrication and modeling of silicon-based integrated circuits. In 1993 he joined IBM's Semiconductor Research and Development Center in the Advanced Semiconductor Technology Center in Hopewell Junction, NY, where he was responsible for the development of SiGe technology for mixed signal applications. In 1998 he joined IBM's Manufacturing organization in Essex Junction, VT, where he managed a SiGe technology group and installed the SiGe BiCMOS process in the manufacturing line. In 1999 he rejoined the Semiconductor Research Corporation while remaining in Essex Junction, VT. He is currently a Senior Technical Staff Member of IBM and manages a SiGe Simulation, Modeling, and Design Kit area.