Inaugural Samsung Ph.D. Fellowship Awarded

 

October 17, 2014

Yoongu Kim has been awarded The Samsung Ph.D. Fellowship for the 2014-15 academic year. Samsung created this fellowship with the intent to support a student in the area of computer architecture, specializing in memory system design. This is the first time the fellowship was ever awarded, and Yoongu Kim is the inaugural recipient within the United States.

Professor Onur Mutlu of ECE, Yoongu’s Ph.D. advisor, selected Yoongu to receive this award on the basis of Yoongu’s research contributions in designing reliable, efficient and high-performance main memory subsystems. Yoongu’s most recent works focused on finding, analyzing, and fixing a new failure common in modern computer memory chips. This failure is called row-hammer attacks, and Yoongu develop solutions to them to enhance reliability and security of memory. In the past, Yoongu developed new techniques to enhance memory performance and energy efficiency, including the notion of SALP (Subarray-Level Parallelism), as well as provide quality of service in memory controllers to enable more predictability in the computing system.

Yoongu has been a Ph.D. student in the ECE department since 2008, advised by Professor Mutlu. He received a B.S. in Electrical Engineering from Seoul National University. Yoongu was an intern at the Samsung Memory Division (in Korea) between June-September 2013. More information about his research can be found on his website.

Related People:

Onur Mutlu