Terahertz Plasmonic Devices

ECE Seminar: Terahertz Plasmonic Devices

Starts at: September 5, 2013 4:30 PM

Ends at: 5:30 PM

Location: Scaife Hall Room 125

Speaker: Michael Shur

Affiliation: Professor, Physics, Applied Physics and Astronomy Director, Center for Broadband Data Transport Science and Technology, Rensselaer Polytechnic Institute

Refreshments provided: Yes

Link to Abstract


Abstract: The field effect transistor feature sizes have shrunk to the point, where ballistic (collisionless) mode of electron transport is becoming dominant. In the ballistic regime, the device physics is completely different. For example, the effective electron mobility becomes proportional to the device feature size. At THz and sub-THz frequencies, the ballistic transport affects devices even with relatively large (submicron scale) feature sizes. THz radiation excites the waves of the electron density (i.e. plasma waves) in transistor channels. These waves have characteristic frequencies in the THz range even for devices with feature sizes exceeding a few hundred nanometers. Rectification of plasma waves can be used for detecting THz radiation and for imaging and insitu testing of transistor structures. Since propagation of plasma waves is strongly affected by the field distribution in the device channel, plasmonic devices exposed to THz radiation could resolve nanometer feature sizes. In ballistic devices, plasma waves become unstable and cause THz emission. Plasma wave electronics detectors and sources are tunable by applied bias voltage and can be modulated at frequencies up to hundreds of gigahertz. Using synchronized THz transistor arrays instead of single devices is predicted to improve performance of plasmonic THz electronic detectors and sources by several orders of magnitude. 

Michael Shur - Terahertz Plasmonic Devices

Bio: Michael Shur joined RPI in 1996. He has held research or faculty positions at the University of Virginia as the John Money Professor and the Director of Applied Electrophysics Laboratories, A.F. Ioffe Institute, Cornell, and the University of Minnesota. He is Fellow of IEEE, IET,APS, ECS, AAAS, and Vice-President for publications of IEEE Sensor Council. He received the van der Ziel Award from the International Semiconductor Device Research Symposium in 1999, the Senior Humboldt Research Award in 2002, IEEE Donald Fink Best Paper Award in 2007, and IEEE Kirchmayer Award in 2007.