|Department||Electrical and Computer Engineering|
|Office||247 Roberts Engineering Hall|
The fact that the tunneling current between two ferromagnetic electrodes depends upon the relative orientation of their magnetizations opens enormous possibilities for applications such as nonvolatile memories and magnetic field sensors. In particular, devices based on tunneling would have large impedance and require only a small magnetic field for operation. Furthermore, nonvolatile applications would not require a bias field.
In order to realize the full potential of spin-dependent tunneling, Professor White is trying to develop a deeper scientific understanding of this phenomenon. Not only must one have a better theoretical understanding of the spin-dependent tunneling process, including the voltage dependence of the magnetoresistance, but one must also understand those aspects of the tunnel junction that govern its operation.
Professor White is exploring the impact of various governmental policies on the technology innovation process-the process whereby new technology appears in a competitive product or process. Examples of issues include SPIR program and the management of intellectual property.