This course is intended to provide a foundation in device operation for circuit designers working in today's sub-micron CMOS. This course will also provide advanced understanding of CMOS technology for those interested in integrated circuit process technology and device physics. We review semiconductor device physics, including carrier dynamics and the basic equations of semiconductor device physics. The operation of the p-n junction diode is also reviewed. The course includes a description of integrated circuit fabrication technology and how it is used to fabricate CMOS devices. With this foundation, we then discuss the MOS capacitor (including its application as a varactor). The theory of the MOS transistor will then be developed, followed by a discussion of important phenomena in sub-micron devices such as: velocity saturation; breakdown; drain-induced barrier lowering; random dopant fluctuations, etc. The student will learn the relationship between device geometry, e.g. length, and fabrication, e.g. doping, and the corresponding circuit performance.
The course will primarily be lecture-based, with some selected simulation exercises. Students are expected to be acquainted with the basic concepts of electrical circuits; electromagnetic fields at the level of a sophomore level physics course, and to have adequate preparation in mathematics (basic differential equations and MATLAB or similar applications). Prior coursework in device physics is helpful but not required for graduate students.