12 units
This course is intended to provide a foundation in device operation for circuit designers working in today's sub-micron CMOS. This course will introduce the student to the concepts of carrier dynamics in modern silicon CMOS devices. With this foundation, the student will learn how modern integrated circuit devices operate, including pn junction diodes and varactors, MOS varactors and most importantly, sub-micron NMOS and PMOS devices. The student will learn the relationship between device geometry, e.g. length, and fabrication, e.g. doping, and the corresponding circuit performance. The course will cover basic MOSFET operation as well as advanced topics such as velocity saturation, device breakdown, DIBL, random dopant fluctuations, etc. The course will be primarily lecture, with a design project as the final exam. Knowledge of MATLAB , basic ODEs and circuit design are necessary. Prior coursework in device physics will be helpful, but is not required.
Lecture: 4 hrs
Prerequisite(s): 18-623 or 18-622
Last updated on November 9, 2007
Applied Physics (Solid State/Magnetics/Fields)
This course is currently being offered.