This work was in collaboration with

 
Andrew Gellman and Charmaine Chan (of the Department of Chemical Engineering)

and also

Ryan Desrosiers (of Electrical and Computer Engineering)

In this work, we used surface science techniques to investigate the growth of boron nitride on substrates thought to be particularly favorable for the formation of the desirable cubic phase. A number of publications below document our work on the lattice-matched Ni(100) substrate. We have also studied the reactions on AlN grown by MOCVD.

Publications

Journal articles

"Nucleation of boron nitride thin films on Ni(100)," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Surface Science 382, 35 (1997).

"Nucleation of boron nitride on Ni(100) surfaces," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Mater. Sci. Engrg. B46, 84 (1997).

"Decomposition of B₂H₆ on Ni(100)," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, J. Vac. Sci. Technol. A15, 2181 (1997).

Conference Proceedings

"Decomposition of Diborane and Ammonia on Ni(100) Surfaces," R.M. Desrosiers, A.J. Gellman, D.W. Greve, and C.F. McFadden, in Diamond Materials IV, pp. 330-335 (The Electrochemical Society, Pennington, NJ, 1995).

Related Paper

"Growth of AlBN solid solutions by organometallic vapor phase epitaxy", A.Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D.W. Greve, R.G. Wilson, J. Appl. Phys. 81, 1715 (1997).